サトウ　ノブオ   Satoh Nobuo   佐藤　宣夫    所属   千葉工業大学  工学部 機械電子創成工学科    千葉工業大学  工学研究科 工学専攻    千葉工業大学  工学研究科 機械電子創成工学専攻    職種   教授
言語種別	英語
発行・発表の年月	2016/07
形態種別	学術雑誌
標題	Investigation of the depletion layer by scanning capacitance force microscopy with Kelvin probe force microscopy
執筆形態	共著
掲載誌名	Japanese Journal of Applied Physics
掲載区分	国内
出版社・発行元	The Japan Society of Applied Physics
巻・号・頁	55(8),pp.08NB10
著者・共著者	Takeshi Uruma, Nobuo Satoh and Hidekazu Yamamoto
概要	We have developed a scanning probe microscope (SPM) that combines atomic force microscopy (AFM) with both Kelvin probe force microscopy (KFM-to measure the surface potential) and scanning capacitance force microscopy (SCFM-to measure the differential capacitance). The surface physical characteristics of a commercial Si Schottky barrier diode (Si-SBD), with and without an applied reverse bias, were measured over the same area by our AFM/KFM/SCFM system. We thus investigated the discrete power device by calculating the depletion-layer width and drawing an energy-band diagram.
DOI	10.7567/JJAP.55.08NB10