ヤマウチ　ヒロシ   Yamauchi Hiroshi   山内　博    所属   千葉工業大学  工学部 宇宙・半導体工学科    職種   准教授
言語種別	英語
発行・発表の年月	2016/04
形態種別	学術雑誌
査読	査読あり
標題	Partial Dissolution of Charge Order Phase Observed in ß-(BEDT-TTF)2PF6 Single Crystal Field Effect Transistor
執筆形態	共著
掲載誌名	Journal of Nanoscience and Nanotechnology
掲載区分	国外
出版社・発行元	American Scientific Publishers
巻・号・頁	16(4),pp.3267-3272
著者・共著者	M. Sakai,N. Moritoshi,S. Kuniyoshi,H. Yamauchi,K. Kudo and H. Masu
概要	The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.
DOI	10.1166/jnn.2016.12286
ISSN	1533-4899