ヤマウチ　ヒロシ   Yamauchi Hiroshi   山内　博    所属   千葉工業大学  工学部 宇宙・半導体工学科    職種   准教授
言語種別	英語
発行・発表の年月	2009/07
形態種別	学術雑誌
標題	High-Speed Operation of Vertical Type Organic Transistors Utilizing Step Edge Structures
執筆形態	共著
掲載誌名	Applied Physics Express
掲載区分	国内
出版社・発行元	JAPAN SOC APPLIED PHYSICS
巻・号・頁	2(7),pp.071501
著者・共著者	T. Takano,H. Yamauchi,M. Iizuka,M. Nakamura,K. Kudo
概要	An organic transistor having a novel structure, step-edge vertical-channel organic field-effect transistor (SVC-OFET), with a short channel length has been fabricated by a low-cost self-alignment process. The short channel is formed in the vertical direction along the side wall of a step-edge structure. The SVC-OFET structure also has an advantage in reducing the parasitic capacitance between the gate and drain electrodes. A short channel and reduced capacitance are important properties for a high-speed operation. The cutoff frequency achieved was approximately 900 kHz, which is a very high value for organic transistors. (C) 2009 The Japan Society of Applied Physics
DOI	10.1143/APEX.2.071501
ISSN	1882-0778