ヤマウチ　ヒロシ   Yamauchi Hiroshi   山内　博    所属   千葉工業大学  工学部 宇宙・半導体工学科    職種   准教授
言語種別	英語
発行・発表の年月	2012/09
形態種別	学術雑誌
査読	査読あり
標題	Gate-Induced Thermally Stimulated Current on the Ferroelectric-like Dielectric Properties of (BEDT-TTF)(TCNQ) Crystalline Field Effect Transistor
執筆形態	共著
掲載誌名	CRYSTALS
掲載区分	国外
出版社・発行元	MDPI AG
巻・号・頁	2(3),pp.730-740
著者・共著者	Masatoshi Sakai,Mitsutoshi Hanada,Shigekazu Kuniyoshi,Hiroshi Yamauchi,Masakazu Nakamura,Kazuhiro Kudo
概要	A gate-induced thermally stimulated current (TSC) on beta'-(BEDT-TTF)(TCNQ) crystalline FET were conducted to elucidate the previously observed ferroelectric-like behaviors. TSC which is symmetric for the polarization of an applied V-G(p) and has a peak at around 285 K was assigned as a pyroelectric current. By integrating the pyroelectric current, temperature dependence of the remnant polarization charge was obtained and the existence of the ferroelectric phase transition at 285 K was clearly demonstrated. We have tentatively concluded that the phase transition between dimer Mott insulator and charge ordered phase occurred at around the interface of organic crystal and substrate.
DOI	10.3390/cryst2030730
ISSN	2073-4352