ヤマウチ　ヒロシ   Yamauchi Hiroshi   山内　博    所属   千葉工業大学  工学部 宇宙・半導体工学科    職種   准教授
言語種別	英語
発行・発表の年月	2011/04
形態種別	学術雑誌
査読	査読あり
標題	Observation of disorder-driven carrier localization by Auger resonant Raman scattering in n-type doped ZnO
執筆形態	共著
掲載誌名	Physical Review
掲載区分	国外
出版社・発行元	AMER PHYSICAL SOC
巻・号・頁	B83(15),pp.155210
著者・共著者	M. Sakamaki,N. Kawai,T. Miki,T. Kaneko,T. Konishi,T. Fujikawa,K. Amemiya and Y. Kitajima,Y. Kato and T. Muro,H. Yamauchi and M. Sakai
概要	We present direct evidence of carrier localization in (Zn, Al)O by using Auger resonant Raman scattering, which makes use of the competition between the core-hole decay time and the motion of the photoexcited electrons. From the branching ratio of the competing two channels, i.e., normal Auger-like and spectator Auger processes, we found that the average carrier transfer time from a donor site is in the range of 6-140 fs depending on structural disorder. The transfer time shows a rapid increase at a certain energy in the conduction band. This result suggests that the disorder-induced localization limits the electronic conductivity in the heavily n-doped ZnO.
DOI	10.1103/PhysRevB.83.155210
ISSN	1098-0121