ヤマウチ　ヒロシ   Yamauchi Hiroshi   山内　博    所属   千葉工業大学  工学部 宇宙・半導体工学科    職種   准教授
言語種別	英語
発行・発表の年月	2009/11
形態種別	学術雑誌
査読	査読あり
標題	Effect of gate insulating layer on organic static induction transistor characteristics
執筆形態	共著
掲載誌名	THIN SOLID FILMS
掲載区分	国外
出版社・発行元	ELSEVIER SCIENCE SA
巻・号・頁	518(2),pp.514-517
著者・共著者	Fanghua Pu,Yasuyuki Watanabe,Hiroshi Yamauchi,Masakazu Nakamura,Kazuhiro Kudo
概要	Organic static induction transistors, which have relatively short vertical channels, are attractive devices for their low operating voltage and high operating speed. However, a gate voltage larger than the Schottky barrier potential usually leads to a large gate leakage current and thus poor device performance. To limit the gate leakage current, we considered adding insulating layers around the gate electrode. The oxidization of aluminum during a physical vapor deposition process was used to form insulating layers around the gate electrode. The results demonstrate that by appending gate insulating layers, gate leakage currents can be effectively reduced and device characteristics, especially the on/off ratio, call be improved. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.
DOI	10.1016/j.tsf.2009.07.064
ISSN	0040-6090