ヤマウチ　ヒロシ   Yamauchi Hiroshi   山内　博    所属   千葉工業大学  工学部 宇宙・半導体工学科    職種   准教授
言語種別	英語
発行・発表の年月	2009/04
形態種別	学術雑誌
査読	査読あり
標題	Fabrication of Active Light-Emitting Device Combined with ZnO Transistors
執筆形態	共著
掲載誌名	JAPANESE JOURNAL OF APPLIED PHYSICS
掲載区分	国内
出版社・発行元	JAPAN SOCIETY APPLIED PHYSICS
巻・号・頁	48(4)
著者・共著者	H. Yamauchi,Y. Watanabe,M. Iizuka,M. Nakamura,and K. Kudo
概要	Organic light-emitting diodes (OLEDs) have received much attention owing to their flexibility, low cost, and ease of processing. Although the active matrix display is a suitable system for what transistors and OLEDs with a large aperture ratio should be fabricated in each pixel. In this work, as one of the methods of expanding effective light-emitting area for active matrix displays, a new type of active light-emitting device combined with a ZnO transistor is proposed. The low-temperature, low-damage sputtering method improves on current by two orders of magnitude. A luminance of the active light-emitting device driven by ZnO transparent field-effect transistor (FET) was obtained. We fabricated a device with ZnO transparent FET and reported the electrical properties of ZnO FET. (C) 2009 The Japan Society of Applied Physics
DOI	10.1143/JJAP.48.04C167
ISSN	0021-4922