ヤマウチ　ヒロシ   Yamauchi Hiroshi   山内　博    所属   千葉工業大学  工学部 宇宙・半導体工学科    職種   准教授
言語種別	英語
発行・発表の年月	2008/12
形態種別	学術雑誌
査読	査読あり
標題	Characterization of Organic Static Induction Transistors with Nano-Gap Gate Fabricated by Electron Beam Lithography
執筆形態	共著
掲載誌名	IEICE TRANSACTIONS ON ELECTRONICS
掲載区分	国内
出版社・発行元	IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
巻・号・頁	E91C(12),pp.1852-1855
著者・共著者	H. Yamauchi,Y. Watanabe,M. Iizuka,M. Nakamura and K. Kudo
概要	Organic static induction transistor (OSIT) is a promising driving device for the displays. since it shows high-speed. high-power and low-voltage operation. In this study, the OSIT with tine gate electrode patterned by electron beam exposure were fabricated. We investigated the basic electrical characteristics of copper phthalocyanine OSIT and compared with the calculation results obtained by two-dimensional (2D) device simulator. The experimental results show that the gate modulation improved by reducing the electrode gap and on/off current ratio depends on the gate gap.
DOI	10.1093/ietele/e91-c.12.1852
ISSN	0916-8524/1745-1353