ヤマウチ　ヒロシ   Yamauchi Hiroshi   山内　博    所属   千葉工業大学  工学部 宇宙・半導体工学科    職種   准教授
言語種別	英語
発行・発表の年月	2008/12
形態種別	論文その他
標題	Investigation of Organic Static Induction Transistor Gate Electrodes, Organic Material Electronics
執筆形態	共著
掲載誌名	IEICE Technical Report
掲載区分	国内
出版社・発行元	The Institute of Electronics, Information and Communication Engineers
巻・号・頁	108(348),pp.13-17
著者・共著者	F. Pu,K. Kikuchi,Y. Watanabe,H. Yamauchi and K. Kudo
概要	Organic Static Induction transistors (OSITs) are remarkable for relatively low operating voltage and high operating speed, which can be mainly attributed to their short vertical channels. While the interface between the source electrode and the organic semiconductor plays an important role in the injection of carriers, the structure of the gate electrode is another key factor to the characteristics of an OSIT. In this research, we focused on reducing the gate leakage current to improve the characteristics of an OSIT with a slit-type gate electrode. The experimental results show that by appending insulating layers around the gate electrode, the gate leakage current could be effectively reduced and thus the device performance gets improved.
ISSN	0913-5685
PermalinkURL	http://id.ndl.go.jp/bib/9763234