ヤマウチ　ヒロシ   Yamauchi Hiroshi   山内　博    所属   千葉工業大学  工学部 宇宙・半導体工学科    職種   准教授
言語種別	日本語
発行・発表の年月	2008/02
形態種別	学術雑誌
査読	査読あり
標題	酸化亜鉛とペンタセン薄膜トランジスタを用いたコンプリメンタリー型論理素子の作製と評価
執筆形態	共著
掲載誌名	電気学会論文誌C
掲載区分	国内
出版社・発行元	Institute of Electrical Engineers of Japan
巻・号・頁	128(2),213-219頁
著者・共著者	家地洋之,渡邊康之,山内博,工藤一浩
概要	We fabricated hybrid complementary inverters with n-channel zinc oxide (ZnO) transistors as the n-type inorganic material and p-channel organic transistors using pentacene as the p-type organic material. The complementary inverter exhibited a large voltage gain of 10 - 12 and a cut off frequency of 0.5 kHz. ZnO thin film transistors show n-type semiconducting properties having field effect mobility of 2.1 × 10-3 cm/Vs. On the other hand, pentacene thin film transistors show p-type semiconducting properties having field effect mobility of 3.2 × 10-2 cm/Vs. We describe basic charge transfer characteristics of ZnO thin films. The results obtained here demonstrate that it is important for the transistor using ZnO to be injected charge from electrode to semiconducting material effectively. © 2008 The Institute of Electrical Engineers of Japan.
DOI	10.1541/ieejeiss.128.213
ISSN	1348-8155