サトウ　ノブオ   Satoh Nobuo   佐藤　宣夫    所属   千葉工業大学  工学部 宇宙・半導体工学科    千葉工業大学  工学研究科 工学専攻    千葉工業大学  工学研究科 機械電子創成工学専攻    職種   教授
言語種別	英語
発行・発表の年月	2018/07
形態種別	学術雑誌
標題	Nanoscale investigation of the silicon carbide double-diffused MOSFET with scanning capacitance force microscopy
執筆形態	共著
掲載誌名	Japanese Journal of Applied Physics
巻・号・頁	Volume 57(Number 8S1)
著者・共著者	Mizuki Nakajima, Yuki Uchida, Nobuo Satoh, and Hidekazu Yamamoto
概要	Power semiconductor devices are progressing towards high breakdown voltages and are fabricated using wide-band-gap semiconductor materials and parallel integration facilitated by microfabrication techniques. We achieved nanoscale observation of power semiconductor devices by scanning probe microscopy (SPM) based on the combination of atomic force microscopy (AFM), Kelvin probe force microscopy (KFM), and scanning capacitance force microscopy (SCFM), which enabled direct observation of internal structures and channel formation in a silicon carbide double-diffused MOSFET at nanoscale resolution. Nanoscale observations were performed with stability control using the frequency-modulation (FM) detection method in a vacuum-pressure environment, with and without bias voltage applied to the MOSFET.
DOI	10.7567/JJAP.57.08NB09