ヤマウチ　ヒロシ   Yamauchi Hiroshi   山内　博    所属   千葉工業大学  工学部 宇宙・半導体工学科    職種   准教授
言語種別	英語
発行・発表の年月	2007/04
形態種別	学術雑誌
査読	査読あり
標題	Fabrication of Vertical Organic Light-Emitting Transistor Using ZnO Thin film
執筆形態	共著
掲載誌名	Jpn. J. Appl. Phys.
掲載区分	国内
出版社・発行元	INST PURE APPLIED PHYSICS
巻・号・頁	46(4B),pp.2678-2682
著者・共著者	H. Yamauchi,M. Iizuka and K. Kudo
概要	Organic light-emitting diodes (OLEDs) combined with thin film transistor (TFT) are well suitable elements for low-cost, large-area active matrix displays. On the other hand, zinc oxide (ZnO) is a transparent material and its electrical conductivity is controlled from conductive to insulating by growth conditions. The drain current of ZnO FET is 180 mu A. The OLED uses ZnO thin film (Al-doped) for the electron injection layer and is controlled by radio frequency (rf) and direct current (dc) sputtering conditions, such as Al concentration and gas pressure. At concentration in the ZnO film and deposition rate have strong effects on electron injection. Furthermore, the OLED driven by ZnO FET shows a luminance of 13 cd/m(2), a luminance efficiency of 0.7 cd/A, and an on-off ratio of 650.
DOI	10.1143/JJAP.46.2678
ISSN	0021-4922