ヤマウチ　ヒロシ   Yamauchi Hiroshi   山内　博    所属   千葉工業大学  工学部 宇宙・半導体工学科    職種   准教授
言語種別	英語
発行・発表の年月	2004/04
形態種別	学術雑誌
査読	査読あり
標題	High-Speed Damage-Free Contact Hole Etching Using Dual Shower Head Microwave-Excited High-Density-Plasma Equipment
執筆形態	共著
掲載誌名	Jpn. J. Appl. Phys.
掲載区分	国内
出版社・発行元	JAPAN SOC APPLIED PHYSICS
巻・号・頁	43(4B),pp.1784-1787
著者・共著者	T. Goto,H. Yamauchi,T. Kato,M. Terasaki,A. Teramoto,M. Hirayama,S. Sugawa and T. Ohmi
概要	Dual shower head microwave-excited plasma etching equipment for separating the plasma-excited region from the etching process region has been developed. With the aim of realization of damage-free etching, the carrier activation of boron-doped p(+)-Si is investigated after plasma irradiation. The damage-free-etching mode in which holes do not deactivate was found. Contact holes are successfully etched using a Surface damage-free etching process consisting of high-speed etching mode and surface damage-free etching mode. The damage-free-etching mode consists of low-self-bias condition and a low etching gas flow rate as compared with the high-speed mode. For both modes, the etcher can maintain the process uniformity because the etcher can control self-bias voltages without changing other process parameters.
DOI	10.1143/JJAP.43.1784
ISSN	0021-4922