ヤマウチ　ヒロシ   Yamauchi Hiroshi   山内　博    所属   千葉工業大学  工学部 宇宙・半導体工学科    職種   准教授
言語種別	英語
発行・発表の年月	2003/04
形態種別	学術雑誌
査読	査読あり
標題	A New Microwave-Exited Plasma Etching Equipment for Separating Plasma Excited Region from Etching Process Region
執筆形態	共著
掲載誌名	Jpn. J. Appl. Phys.
掲載区分	国内
出版社・発行元	JAPAN SOC APPLIED PHYSICS
巻・号・頁	42(4B),pp.1887-1891
著者・共著者	T. Goto,M. Hirayama,H. Yamauchi,M. Moriguchi,S. Sugawa and T. Ohmi
概要	A new microwave-excited plasma etching equipment has been developed. The equipment adopts a low-electron temperature and high-density plasma source using a radial line slot antenna and a newly developed metal shower head for etching gas supply into the low-electron temperature diffusion plasma region in order to control the decomposition of gasses. Ion flux and ion energy to a wafer can be individually controlled by adjusting the microwave power applied to the antenna and the rf power applied to the wafer stage. Contact holes of 100 nm wide in SiO2 were successfully etched using C5F8. Etching selectivity to the resist was improved by introducing C5F8 into the etching process region using the gas shower head, which indicates that excess decomposition Of C5F8 is suppressed.
DOI	10.1143/JJAP.42.1887
ISSN	0021-4922