サトウ　ノブオ   Satoh Nobuo   佐藤　宣夫    所属   千葉工業大学  工学部 宇宙・半導体工学科    千葉工業大学  工学研究科 工学専攻    千葉工業大学  工学研究科 機械電子創成工学専攻    職種   教授
言語種別	英語
発行・発表の年月	2017/07
形態種別	学術雑誌
標題	Observation of silicon carbide Schottky barrier diode under applied reverse bias using atomic force microscopy/Kelvin probe force microscopy/scanning capacitance force microscopy
執筆形態	共著
掲載誌名	Japanese Journal of Applied Physics
出版社・発行元	Japanese Journal of Applied Physics
巻・号・頁	Volume 56(Number 8S1)
著者・共著者	Takeshi Uruma, Nobuo Satoh and Hidekazu Yamamoto
概要	We have observed a commercial silicon-carbide Schottky barrier diode (SiC-SBD) using our novel analysis system, in which atomic force microscopy (AFM) is combined with both Kelvin probe force microscopy (KFM; for surface-potential measurement) and scanning capacitance force microscopy (SCFM; for differential-capacitance measurement). The results obtained for the SiC-SBD under an applied reverse bias indicate both the scan area in the sample and a peak value of the SCFM signal in the region where the existence of trapped electrons is deduced from the KFM analysis. Thus, our measurement system can be used to examine commercial power devices; however, novel polishing procedures are required in order to investigate the Schottky contact region.
DOI	10.7567/JJAP.56.08LB05