|
サトウ ノブオ
Satoh Nobuo
佐藤 宣夫 所属 千葉工業大学 工学部 宇宙・半導体工学科 千葉工業大学 工学研究科 工学専攻 千葉工業大学 工学研究科 機械電子創成工学専攻 職種 教授 |
|
| 言語種別 | 英語 |
| 発行・発表の年月 | 2016/07 |
| 形態種別 | 学術雑誌 |
| 標題 | Investigation of the depletion layer by scanning capacitance force microscopy with Kelvin probe force microscopy |
| 執筆形態 | 共著 |
| 掲載誌名 | Japanese Journal of Applied Physics |
| 掲載区分 | 国内 |
| 出版社・発行元 | The Japan Society of Applied Physics |
| 巻・号・頁 | 55(8),pp.08NB10 |
| 著者・共著者 | Takeshi Uruma, Nobuo Satoh and Hidekazu Yamamoto |
| 概要 | We have developed a scanning probe microscope (SPM) that combines atomic force microscopy (AFM) with both Kelvin probe force microscopy (KFM-to measure the surface potential) and scanning capacitance force microscopy (SCFM-to measure the differential capacitance). The surface physical characteristics of a commercial Si Schottky barrier diode (Si-SBD), with and without an applied reverse bias, were measured over the same area by our AFM/KFM/SCFM system. We thus investigated the discrete power device by calculating the depletion-layer width and drawing an energy-band diagram. |
| DOI | 10.7567/JJAP.55.08NB10 |