サトウ　ノブオ   Satoh Nobuo   佐藤　宣夫    所属   千葉工業大学  工学部 宇宙・半導体工学科    千葉工業大学  工学研究科 工学専攻    千葉工業大学  工学研究科 機械電子創成工学専攻    職種   教授
言語種別	英語
発行・発表の年月	2012/03/03
形態種別	学術雑誌
査読	査読あり
標題	Energy Band Diagram near the Interface of Aluminum Oxide on p-Si Fabricated by Atomic Layer Deposition without/with Rapid Thermal Cycle Annealing Determined by Capacitance-Voltage Measurements
執筆形態	共著
掲載誌名	e-Journal of Surface Science and Nanotechnology
掲載区分	国外
巻・号・頁	10,pp.22-28
担当区分	筆頭著者,責任著者
国際共著	国際共著
著者・共著者	N. Satoh, I. Cesar, M. Lamers, I. Romijn, K. Bakker, C. Olson, D. Oosterling-Saynova, Y. Komatsu, F. Verbakel, M. Wiggers and A. Weeber
概要	We evaluated the fixed charge and the interface state density from the capacitance-voltage (C-V) measurement before and after rapid thermal cycle annealing using p-type silicon in which the passivation was performed with aluminum oxide film by atomic layer deposition. From C-V measurement we obtained the surface potential, accumulation and depletion width, and as a result, energy band diagrams were produced. It was determined that a barrier height of approximately 100 mV was induced by fixed negative charges in the Al2O3 layer near the interface to the p-type Si substrate. The field effect of the Al2O3 passivation layer created by RTCA strongly remains without depending on the gate voltage.
DOI	http://doi.org/10.1380/ejssnt.2012.22
PermalinkURL	https://www.jstage.jst.go.jp/article/ejssnt/10/0/10_0_22/_article