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    (Last updated : 2025-04-10 10:53:10)
  Shin-Ichiro HAYASHI
Department of Electrical and Electronic Engineering, Faculty of Engineering
Associate Professor
■ Office
Tsudanuma Campus, No.4 Building,5th floor room 040509
■ Academic background
1. 〔Doctorial Course〕, Tokyo Metropolitan University, Completed,
■ Present specialized field
Power engineering (Key Word:power electronics, power semiconductor devices, reliability engineering) 
■ Works
1. Article Experimental Verification of the Switching Loss Reduction Effect and Characteristic Fluctuation of SiC MOSFETs Dependent Gate Drive Voltage  pp.98-106 (Collaboration) 2025/02 Link
2. Article Single-Input Dual-Output Digital Gate Driver IC Automatically Equalizing Drain Current Variations of Two Parallel-Connected SiC MOSFETs IEEE Transactions on Power Electronics  (Collaboration) 2024/09/17 Link
3. Article Operational Verification of Gate Drive Circuit With Condition Monitoring Function for Gate Oxide Degradation of SiC MOSFETs IEEE Open Journal of Power Electronics 5,pp.709-717 (Collaboration) 2024/05/06 Link
4. Article Gate Drive Circuit with Input Capacitance Ciss Measurement Function\\for the Condition Monitoring of Power Devices  pp.471-479 (Collaboration) 2022/06 Link
5. Article Design a Continuous Switching Test Circuit for Power Devices to Evaluate Reliability IEEJ Journal of Industry Applications 11(1),pp.108-116 (Collaboration) 2022/01/01 Link
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■ Home Page
   https://sites.google.com/p.chibakoudai.jp/cit-pelab/home