Faculty Information - Sirou Uchida

Office

Academic background

Works

（Last updated : 2025-03-24 13:43:00）

Sirou Uchida
Department of Advanced Materials Science and Engineering, Faculty of Engineering

Master's Program in Advanced Materials Science and Engineering, Graduate School of Engineering

Professor

■ Office

Tsudanuma Campus, No.2 Building,5th floor room 010511

■ Academic background

1.		Waseda University,
2.	1988/04～1990/03	〔Master Course〕, Graduate School, Division of Science and Engineering, Waseda University, Completed,
3.	1984/04～1988/03	Faculty of Engineering, Waseda University, Graduated,

■ Works

1.	Article	Effect of Br Ions in Octylammonium 2D Perovskites for Performance Improvement of CuSCN-Based Perovskite Solar Cells ACS Applied Energy Materials 7,pp.5315-5320 (Collaboration) 2024/06/14
2.	Article	Optical Wireless Power Transmission under Deep Seawater Using GaInP Solar Cells Enerrgies 17(1572),pp.1-10 (Collaboration) 2024/03/26
3.	Article	Optical wireless power transmission using CIGS solar cells Proc. SPIE 12881(09),pp.01-05 (Collaboration) 2024/03/08
4.	Article	InGaN photovoltaic cells for applications in laser power beaming Proc. SPIE 12886(07),pp.01-06 (Collaboration) 2024/03/08
5.	Article	Optical Wireless Power Transmission Using a GaInP Power Converter Cell under High-Power 635 nm Laser Irradiation of 53.5 W/cm2 Energies (Collaboration) 2022/05/18
6.	Article	A 46.7% efficient GaInP photonic power converter under high-power 638 nm laser uniform irradiation of 1.5 W cm−2 Applied Physics Express 15,pp.062003-1-062003-5 (Collaboration) 2022/05/16
7.	Article	A 43.0% efficient GaInP photonic power converter with a distributed Bragg reflector under high-power 638 nm laser irradiation of 17 W cm−2, Applied Physics Express 14(5),pp.052002-1-052002-5 (Collaboration) 2021/04/15
8.	Article	Direct observation of contact potential distributions of wafer-bonded p-GaAs/n-GaN and p-GaAs/n-Si by scanning Kelvin probe force microscopy Japanese Journal of Applied Physics 59(11),pp.115502-1-115502 (Collaboration) 2020/11/01
9.	Article	The investigation of wafer-bonded multi-junction solar cell grown by MBE Journal of Crystal Growth 515,pp.16-20 (Collaboration) 2019/06
10.	Article	Room-temperature bonding of GaAs//Si and GaN//GaAs wafers with low electrical resistance Applied Physics Express 11(10),pp.106501-1-10651-3 (Collaboration) 2018/09
11.	Article	Conversion efficiencies of single-junction III-V solar cells based on InGaP, GaAs, InGaAsP, and InGaAs for laser wireless power transmission Japanese Journal of Applied Physics 57(8S3),pp.08RD12 (Collaboration) 2018/07
12.	Article	Improved efficiency of a four-junction solar cell under real sunlight. Japanese Journal of Applied Physics 57(8S3),pp.08RD04 (Collaboration) 2018/06
13.	Article	Electron irradiation study of room-temperature wafer-bonded foμr-junction solar cell grown by MBE Solar Energy Materials and Solar Cells 171,pp.118-122 (Collaboration) 2017/06
14.	Article	Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells Applied Surface Science (Collaboration) 2016/07
15.	Article	Room-temperature GaAs/InP wafer bonding with extremely low resistance Applied Physics Express 7(11),pp.1-4 (Collaboration) 2014/10
16.	Article	Carriers transport properties in GaInP solar cells grown by molecular beam epitaxy Solid State Communications 200,pp.9-13 (Collaboration) 2014/09
17.	Article	Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells Solar Energy Materials and Solar Cells 127,pp.1-5 (Collaboration) 2014/08
18.	Article	GaAs tunnel junction grown using tellurium and magnesium as dopants by solid-state molecular beam epitaxy Japanese Journal of Applied Physics 53(2),pp.1-5 (Collaboration) 2014/01
19.	Article	A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy Journal of Semiconductors 34(10),pp.1-4 (Collaboration) 2013/03
20.	Article	Monolithic dual-wavelength high-power lasers for CD-R/DVD +/- R/RW/RAM IEEE J. Selected Topics in Quantum Electronics 11(5),pp.1148-1152 (Collaboration) 2005/09
21.	Article	The investigation of GaInP solar cell grown by all-solid MBE Journal of Crystal Growth 378,pp.604-606 (Collaboration) 2013/01
22.	Article	High-efficiency GaAs and GaInP solar cells grown by all solid-state Molecular-Beam-Epitaxy Nanoscale Research Letters 6(1),pp.576-579 (Collaboration) 2011/10
23.	Other	Short wavelength lasers based on GaAs and GaN substrate for DVD and Blu-ray technology TECHNICAL DIGEST, IEEE international ELECTRON DEVICES meeting 2006,SAN FRANCISCO pp.841-844 2006/12
24.	Article	Degradation in AlGaInN lasers phys. stat. sol. 0(7),pp.2292-2295 (Collaboration) 2003/11
25.	Article	Recent Progress in High-Power Blue-Violet Lasers IEEE J. Selected Topics in Quantum Electronics 9(5),pp.1252-1259 (Collaboration) 2003/09
26.	Article	100-mW Kink-Free Blue-Violet Laser Diodes With Low Aspect Ratio IEEE J. Quantum Electronics 39(1),pp.135-140 (Collaboration) 2003/01
27.	Other	High-power Blue-Violet Lasers Grown On 3-inch Sapphire and GaN Substrate INSTITUTE OF PHYSICS CONFERENCE SERIES 174,pp.307-314 2003/10
28.	Article	Improvements of semiconductor lasers for optical disk recording (Single) 2011/02
29.	Article	Short wavelength lasers based on GaAs and GaN substrate for DVD and Blu-ray technology Tech. Digest,IEEE Int. Electron Devices Meeting 2006,San Francisco 32(4),pp.841-845 (Collaboration) 2006/12
30.	Article	Monolithic dual-wavelength lasers for CD-R/ DVD ± RW/R/RAM Proceedings of the SPIE (5380),pp.417-421 (Collaboration) 2004/09
31.	Article	Monolithic dual-wavelength lasers for CD-R/DVD±RW/R/RW Conf. Digest, IEEE 19th Int. Semiconductor Laser Conf, Matsue pp.123 (Collaboration) 2004/09
32.	Article	High-power blue-violet lasers. Proc. 1st Asia-Pacific Workshop on Widegap Semiconductors, Awaji JL(03),pp.67 (Collaboration) 2003/10
33.	Article	High-power AlGaInN lasers for Blu-ray Disc system (4995),pp.117-123 (Collaboration) 2003/07
34.	Article	Blue-violet laser diodes suitable for Blu-ray disk. PHYSICA STATUS SOLIDIB-BASIC SOLID STATE PHYSICS a(194),pp.407 (Collaboration) 2002/12
35.	Article	Extremely long lifetime blue-violet laser diodes grown homoepitaxially on GaN substrate. Ext. Abst. SSDM 2002, Nagoya pp.832-833 (Collaboration) 2002/11
36.	Article	High-power AlGaInN laser diodes with high kink level and low relative intensity noise. Japanese Journal of Applied Physics 41,pp.1829 (Collaboration) 2002/11
37.	Article	Recent progress in high-power blue-violet lasers. Conf. Digest, IEEE 18th Int. Semiconductor Laser Conf. Garisch-Partenkirchen MA(3),pp.5 (Collaboration) 2002/10
38.	Article	High-power AlGaInN lasers. PHYSICA STATUS SOLIDIB-BASIC SOLID STATE PHYSICS a(192),pp.269 (Collaboration) 2002/07
39.	Article	AlGaInN-based laser diodes homoepitaxially grown on GaN substrate Ext. Abst. 44th Electron. Mater. Conf. 2002, Santa Barbara V9 (Collaboration) 2002/06
40.	Article	High power 400nm-AlGaInN/650nm-AlGaInP semiconductor lasers (4651),pp.18-26 (Collaboration) 2002/05
41.	Article	Highly uniform characteristics of blue-violet lasers on a 3-inch Φ wafer Inst. Phys. Conf. Ser. 170,pp.701-709 (Collaboration) 2002/01
42.	Article	Novel techniques for stabilizing transverse mode in AlGaInN-based laser diodes. 170,pp.177-182 (Collaboration) 2002/01
43.	Article	Super high output power of 4.2 W in AlGaInN-based blue-violet laser diode array. Inst. Phys. Conf. Ser. (Collaboration) 2002/01
44.	Article	400-nm band AlGaInN-based high power laser diodes Mater. Res. Soc. Symp. Proc pp.693 (Collaboration) 2001/12
45.	Article	Estimation of device properties in AlGaInN-based laser diodes by time-resolved photoluminescence PHYSICA STATUS SOLIDIB-BASIC SOLID STATE PHYSICS 188,pp.101-104 (Collaboration) 2001/11
46.	Article	Novel techniques for stabilizing transverse mode in AlGaInN-based laser diodes. PHYSICA STATUS SOLIDIB-BASIC SOLID STATE PHYSICS 188,pp.55-58 (Collaboration) 2001/11
47.	Article	AlGaInN high power lasers Tech. Digest, Int. Symp. on Optical Memory 2001 (Fr-M-03),pp.226 (Collaboration) 2001/07
48.	Article	GaN-based blue laser diodes. J. of Physics: Conference Series (Collaboration) 2001/07
49.	Article	High performance blue-violet AlGaInN laser diodes Tech. Digest, CLEO/Pacific Rim 2001, Chiba WC1-1(II),pp.32-33 (Collaboration) 2001/07
50.	Article	AlGaInN high power lasers grown on ELO-GaN Proc. China-Japan Workshop on Nitride Semiconductor Materials and Devices 2001, pp.100 (Collaboration) 2001/06
51.	Article	AlGaInN high power lasers. Tech. Digest, 2001 Conf. Lasers and Electro-Optics, Baltimore pp.83 (Collaboration) 2001/05
52.	Article	GaN-based high power blue-violet laser diodes Japanese Journal of Applied Physics (Collaboration) 2001/05
53.	Article	GaN-based high-power laser diodes B(82),pp.248-252 (Collaboration) 2001/05
54.	Article	GaN-based violet-blue laser diodes (4351),pp.1-12 (Collaboration) 2001/03
55.	Article	AlGaInN high-power lasers grown on an ELO-GaN layer. Journal of Crystal Growth (221),pp.646-651 (Collaboration) 2000/12
56.	Article	AlGaInN laser diodes grown on an ELO-GaN substrate vs. on a sapphire substrate Conf. Digest, IEEE 17th Int. Semiconductor Laser Conf. 2000, Monterey pp.109-110 (Collaboration) 2000/09
57.	Article	GaN-based high power blue-violet laser diodes. Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Ser. (1),pp.878-881 (Collaboration) 2000/09
58.	Article	Dislocations in AlGaInN-based laser diodes Ext. Abst. 42nd Electron. Mater. Conf. 2000, Denver (Collaboration) 2000/07
59.	Article	AlGaInN based laser diodes Proc. SPIE (3947),pp.156-165 (Collaboration) 2000/01
60.	Article	Growth and characterization of GaN underlying layer used in blue-violet GaN-based laser diodes on sapphire Mater. Res. Soc. Symp. Proc. (G9),pp.639 (Collaboration) 2000/01
61.	Article	Single-stripe high-power 2-W cw visible laser diodes. Proc. SPIE 2148,pp.37 (Collaboration) 1994/01
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