Faculty Information - Hiroshi Suga

Office

Present specialized field

Research activities

Acquisition patent

Works

Home Page

（Last updated : 2025-05-19 11:33:06）

Hiroshi Suga
Department of Space and Semiconductor Engineering, Faculty of Engineering

Master's Program in Innovative Mechanical and Electronic Engineering, Graduate School of Engineering

Graduate School of Engineering

Professor

■ Office

Tsudanuma Campus, No.2 Building,5th floor room 010509

■ Present specialized field

Nanostructural physics, Nano/micro-systems, Electron device and electronic equipment, Design engineering, Mechanics and mechatronics

■ Research activities

2018/08～

The Japan Society of Vacuum and Surface Science

■ Acquisition patent

1.	2015/11/17	drive method for memory element, and storage device using memory element
2.	2015/09/15	drive method for memory element, and storage device using memory element

■ Works

1.	Article	Resistance Switch in a Minimal-Fullerene Chain in Vertically Stacked Electrodes ACS Applied Electronic Material (Collaboration) 2024/04/26
2.	Article	Effective Conduction Path of a C60 Chain in a Nanogap Electrode ACS Applied Electronic Materials 6,pp.1740-1745 (Collaboration) 2024/02
3.	Article	C60 nanowire two-state resistance switching: fabrication and electrical characterizations Japanese Journal of Applied Physics 61,pp.SD0804-1-SD0804-9 (Collaboration) 2022/05/20
4.	Article	Fullerene Nanostructure-Coated Channels Activated by Electron Beam Lithography for Resistance Switching ACS Applied Nano Materials 5,pp.6430-6437 (Collaboration) 2022/05
5.	Article	Stable Resistance Switching in Lu3N@C80 Nanowires Promoted by the Endohedral Effect: Implications for Single-Fullerene Motion Resistance Switching ACS Applied Nano Materials 4(8),pp.7935-7942 (Collaboration) 2021/10
6.	Article	Single-Molecular Bridging in Static Metal Nanogap Electrodes Using Migrations of Metal Atoms. The Journal of Physical Chemistry C, J. Phys. Chem. C 124,pp.14007-14015 (Collaboration) 2020/06/01
7.	Article	Feedback Electromigration-Assisted by Alternative Voltage Operation for the Fabrication of Facet-Edge Nanogap Electrodes ACS Applied Nano Materials 3(5),pp.4077-4083 (Collaboration) 2020/05/01
8.	Article	Kyohei Hashiguchi, Kenta Suzuki, Hiroshi Hiroshima, Hiroshi Suga: "Pt nanogap electrode fabrication by two-layer lift-off UV-NIL and nanowire breakdown", IEEE Transactions on Nanotechnology 17, 1094-1097 (2018.6). doi: 10.1109/TNANO.2018.2844125. (IF2.857) IEEE Transactions on Nanotechnology 17,pp.1094-1097 (Collaboration) 2018/06
9.	Article	Damage-free polymer surface modification employing inward-type plasma Japanese Journal of Applied Physics 56,pp.086201 (Collaboration) 2017/07
10.	Article	An Accurate Method to Determine the Through-plane Electrical Conductivity and to Study Transport Properties in Film Samples Organic Electronics 38,pp.264-270 (Collaboration) 2016/11
11.	Article	Single-Crystalline Nanogap Electrodes: Enhancing the Nanowire-Breakdown Process with a Gaseous Environment ACS Applied Materials and Interfaces 4,pp.5542-5546 (Collaboration) 2012/08
12.	Article	Resistance switch using metal nanogap electrodes in air Journal of applied physics 112,pp.044309 (Collaboration) 2012/08
13.	Article	Non-volatile high-speed resistance switching nanogap junction memory Applied Physics Letters 99,pp.263503 (Collaboration) 2011/12
14.	Article	Physical Model for High-to-Low Resistive Switching of Gold Nanogap Junction Japanese Journal of Applied Physics 50,pp.06GF10 (Collaboration) 2011/06
15.	Article	Threshold Current Density of the Resistance Switching in Pt Nanogap Electrode Japanese Journal of Applied Physics 50,pp.06GF11 (Collaboration) 2011/06
16.	Article	Site-selective deposition of single-wall carbon nanotubes by patterning self-assembled monolayer for application to thin-film transistors PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 247,pp.2750-2753 (Collaboration) 2010/09
17.	Article	Influence of electrode size on resistance switching effect in nanogap junctions APPLIED PHYSICS LETTERS 97,pp.073118 (Collaboration) 2010/08
18.	Article	Thin-film transistors fabricated from semiconductor-enriched single-wall carbon nanotubes PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 246,pp.2849-2852 (Collaboration) 2009/10
19.	Article	Performance Enhancement of Thin-Film Transistors by Using High-Purity Semiconducting Single-Wall Carbon Nanotubes APPLIED PHYSICS EXPRESS 2,pp.071601 (Collaboration) 2009/06
20.	Article	Nanomanipulation of Single Nanoparticle Using a Carbon Nanotube Probe in a Scanning Electron Microscope Applied Physics Express 2,pp.055004 (Collaboration) 2009/05
21.	Article	Non-volatile Resistance Switching using Single-Wall Carbon Nanotube Encapsulating Fullerene Molecules APPLIED PHYSICS EXPRESS 2,pp.035008-1～035008-3 (Collaboration) 2009/03
22.	Article	Simple and Scalable Gel-Based Separation of Metallic and Semiconducting Carbon Nanotubes NANO LETTERS 9,pp.1497～1500 (Collaboration) 2009/02
23.	Article	Non-Volatile Resistance Switching Using Silicon Nanogap Junction APPLIED PHYSICS EXPRESS 1,pp.103001 (Collaboration) 2008/10
24.	Article	Characterization and protonation behavior of bipyridine thiol self-assembled monolayer on Au(111) studied using X-ray photoelectron spectroscopy and scanning tunneling microscopy Surface Science 601,pp.68-75 (Collaboration) 2007/09
25.	Article	Stable Operating Condition of Carbon Nanotube Field Electron Emitter for Small Size Scanning Electron Microscope Journal of the Vacuum Society of Japan pp.448～551 (Collaboration) 2007/06
26.	Article	Stable multiwalled carbon nanotube electron emitter operating in low vacuum Surf. Interface Anal 38,pp.1763-1767 (Collaboration) 2006/12
27.	Article	Single Molecule Behaviors of a Conjugated 2,2'-Bipyridine Derivative Inserted in a Matrix Layer Using a Dendrimer-Based Template Japanese Journal of Applied Physics 45,pp.L332-334 (Collaboration) 2006/03
28.	Article	Low-Frequency-Noise Spectroscopy of TaOx-based Resistive Switching Memory Advanced electronic materials pp.2100758 (Collaboration) 2021/11
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■ Home Page

https://www.sugalab.org/